Fast Timing Methods for Semiconductor Detectors

Fast timing with DSSSD detectors

The NuSTAR HISPEC slowed down beams project at GSI/FAIR aims to produce rare isotopes with energies of 10 MeV/u and less. The setup requires tracking and Time of Flight(ToF) information [1]. An energy loss measurement is desirable in order to determine Z of the slowed down fragments. The detector should have a time resolution of ∆T 100 ps, position resolution of the order of a mm and energy res...

Semiconductor Detectors for Nuclear Spectrometry *

Please make the following corrections on subject report. Figures 3-2 and 3-3 should be replaced by the attached figures. Page 91, line 12 should be changed to read "The Fano factor established by these measurements is .30 ± 0.03 which is entirely consistent with the approximate value of 0.32 derived from Van Roosbroeck's curves."

Material Identification Methods in Spectral Radiography Using CdTe Semiconductor Detectors

Material identification in radiography is traditionally performed by dualenergy systems, using double exposure technique or two-layers detectors. Performance of such systems results from the closeness of the materials to be discriminated, from photonic noise, and energetic discriminating power of the detector. For difficult problems such as explosive detection in luggage, conventional dual-ener...

Semiconductor Detectors - an Introduction

Microstructured semiconductor neutron detectors

Perforated semiconductor neutron detectors are compact diode detectors that operate at low power and can be fashioned to have high thermal neutron detection efficiency. Fabricated from high-purity Si wafers, the perforations are etched into the diode surface with ICP-RIE and backfilled with LiF neutron reactive material. The intrinsic thermal neutron detection efficiency depends upon many facto...